Dropping Technique

Doping Techniques Involves in unified constal growth or deposition Epitaxy Si or Ge water (kept in graphite boat) is placed whichis in of a thin crystal on another substrall. a long cylindrical quantz tube reactor, coil). then individuals heated (by RF induction Then gases containing compounds of Ge or Si mixed with calculated (appropriate quantities of depant over the water results. for getting Si epitaicial film, SiClA, H2 GNN mixture is used for type doping - above mixture with phosphine (PH3) For p-type / : diborane (BH6) Diffusion technique Conversion of a region of semiconductor material into the crystal lattice of the semiconductor by solid or gaseous diffusion of impunity atom material without any metting and it consists of heating a p-type dopant. By this technique ,the controlled extent of imperidinators penetration can be even less than a few million of a centimetre.

Battery Consists of one or more electrochemical cells connected in senies or parallel or both and convents the chemical energy into electrical Constituents Anode : reducing electrode, gives up is to external circuit Cathode: oxidizing electrode, accepts is from Electrolyte ; ionic conductor ypes : Primary convented - to when product all no reactants more electricity have been is produced by battery is dead. Leclanche, alkaline, Li Secondary- - , Flow battery cy FC - materials pass through the battery. HOFC,SOKE Li-ion battery Secondary battery doesn't containmetallic Li anode hit movement responsible forchanging by discharging this tech first proposed in 1970s by M whittingham anode who used Tis for cathode Cy Li metal for Nobel in Chem 2019 to John B Gradenough, M. Stanley W, Akira Moshino